AO4700 symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl 110 maximum junction-to-lead c steady-state 31 40 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 44 62.5 c/w maximum junction-to-ambient a steady-state 73 62.5 c/w maximum junction-to-ambient a steady-state 74 110 maximum junction-to-lead c steady-state 35 40 maximum junction-to-ambient a t 10s r ja 48 parameter: thermal characteristics mosfet typ max w 1.28 1.28 junction and storage temperature range -55 to 150 -55 to 150 power dissipation p d 22 a 2.6 pulsed forward current b 40 schottky reverse voltage 30 continuous forward current a i f 4 a 5.8 pulsed drain current b 30 gate-source voltage 20 continuous drain current a i d 6.9 parameter mosfet schottky drain-source voltage 30 absolute maximum ratings t a =25c unless otherwise noted features v ds (v) = 30v i d = 6.9a (v gs = 10v) r ds(on) < 28m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) schottky v ds (v) = 30v, i f = 4a, v f <0.5v@3a the AO4700 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous dc-dc conversion applications. standard product AO4700 is pb-free (meets rohs & sony 259 specifications). AO4700l is a green product ordering option. AO4700 and AO4700l are electrically identical. g s a a d d k k 1 2 3 4 8 7 6 5 soic-8 a k g d s n-channel enhancement mode field effect transistor with schottky diode general description www.freescale.net.cn 1 / 5
AO4700 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m ? g fs 10 15.4 s v sd 0.76 1 v i s 3a c iss 680 pf c oss 102 pf c rss 77 pf r g 3 ? q g (10v) 13.84 nc q g (4.5v) 6.74 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 ns q rr 7.8 nc schottky parameters v f 0.45 0.5 v 0.07 0.15 4.2 20 15 60 c t 120 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. ma v r =24v, t j =125c v r =24v, t j =150c junction capacitance v r =15v forward voltage drop i f =3.0a i rm maximum reverse leakage current v r =24v body diode reverse recovery time body diode reverse recovery charge turn-off fall time switching parameters total gate charge total gate charge gate source charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? v gs =10v, v ds =15v, i d =6.9a gate drain charge reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =6.9a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =6.9a m ? v gs =4.5v, i d =5.0a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v i f =6.9a, di/dt=100a/ s i f =6.9a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : sept 2005 www.freescale.net.cn 2 / 5
AO4700 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m : ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125 c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m : ) 25c 125 c v ds =5v v gs =4.5v v gs =10v i d =5a 125c 25 c 25c i d =5a 5v 6v www.freescale.net.cn 3 / 5
AO4700 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25 c v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z t ja .r t ja r t ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 p s www.freescale.net.cn 4 / 5
AO4700 typical electrical and thermal characteristics: schottky 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 0.0 0.2 0.4 0.6 0.8 1.0 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on /(t on +t off ) t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =3a 25c i f =5a v r =24v 125c t on t off p d www.freescale.net.cn 5 / 5
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